100 silicon npn triple diffused planar transistor (high voltage switchihg transistor) application : switching regulator, lighting inverter and general purpose symbol v cbo v ceo v ebo i c i b p c tj t stg ratings 900 800 7 7( pulse 14) 3.5 80(tc=25?) 150 ?5 to +150 unit v v v a a w ? ? n absolute maximum ratings n electrical characteristics symbol i cbo i ebo v (br)ceo h fe v ce (sat) v be (sat) f t c ob ratings 100 max 100 max 800 min 10 to 30 0.5 max 1.2 max 6 typ 105 typ unit m a m a v v v mhz pf conditions v cb =800v v eb =7v i c =10ma v ce =4v, i c =3a i c =3a, i b =0.6a i c =3a, i b =0.6a v ce =12v, i e =?a v cb =10v, f=1mhz 2sc4301 (ta=25?) (ta=25?) i c v ce characteristics (typical) h fe i c characteristics (typical) t on ? stg ? f i c characteristics (typical) q j-a t characteristics i c v be temperature characteristics (typical) v ce (sat),v be (sat) i c temperature characteristics (typical) pc ta derating reverse bias safe operating area safe operating area (single pulse) 0 0 4 2 6 2 134 collector-emitter voltage v ce (v) collector current i c (a) 700ma 500ma 300ma 200ma i b =100ma 1a 0.02 0.1 0.05 1 5 0.5 7 0 1 (i c /i b =5) collector current i c (a) v be (sat) 125?c (case temp) 25?c (case temp) ?5?c (case temp) 25?c ?5?c v ce (sat) 1 2 5 ? c ( c a s e t e m p ) 0.1 1 0.5 7 5 0.2 0.5 5 10 1 switching time t on t stg t f ( s) collector current i c (a) t stg t on t f v cc 250v i c :i b1 :i b2 =2:0.3:? const. 0.1 1 2 0.5 1 10 100 1000 time t(ms) transient thermal resistance q j-a (?c/w) 80 60 40 20 3.5 0 0 25 50 75 100 125 150 ambient temperature ta(?c) maximum power dissipation p c (w) with infinite heatsink without heatsink 100 500 50 1000 1 0.5 0.1 10 20 5 collector-emitter voltage v ce (v) collector current i c (a) without heatsink natural cooling l=3mh i b2 =?.0a duty :less than1% 50 100 500 1000 1 0.5 0.1 10 20 5 collector-emitter voltage v ce (v) collector current i c (a) without heatsink natural cooling 100 s collector-emitter saturation voltage v ce(sat) (v) base-emitter saturation voltage v be(sat) (v) 0 7 2 4 6 0 1.2 0.4 0.6 0.8 1.0 0.2 base-emittor voltage v be (v) collector current i c (a) (v ce =4v) 125?c (case temp) 25?c (case temp) ?5?c (case temp) 0.02 0.1 0.05 1 7 5 0.5 5 10 50 collector current i c (a) dc current gain h fe (v ce =4v) 125?c 25?c ?5?c n typical switching characteristics (common emitter) v cc (v) 250 r l ( ) 83 i c (a) 3 v bb2 (v) ? i b2 (a) ?.5 t on ( m s) 1 max t stg ( m s) 5 max t f ( m s) 1 max i b1 (a) 0.45 v bb1 (v) 10 external dimensions fm100(to3pf) 4.4 1.5 1.5 be c 5.45 ?.1 ?.3 ?.2 1.6 3.3 1.75 0.8 ?.2 2.15 1.05 +0.2 -0.1 5.45 ?.1 23.0 ?.3 16.2 9.5 ?.2 5.5 15.6 ?.2 5.5 ?.2 3.45 3.35 0.65 +0.2 -0.1 ?.2 3.0 0.8 a b weight : approx 6.5g a. part no. b. lot no.
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